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Post by williamplayer on Jan 14, 2014 15:06:53 GMT
IBM Scientists Develop World's Fastest Graphene Transistor YORKTOWN HEIGHTS, NY - 19 Dec 2008: Researchers today announced that they demonstrated the operation of graphene field-effect transistors at GHz frequencies, and achieved the highest frequencies reported so far using this novel non-silicon electronic material. This accomplishment is an important milestone for the Carbon Electronics for RF Applications (CERA) program sponsored by DARPA, as part of the effort to develop the next-generation of communication devices. Graphene is a special form of graphite, consisting of a single layer of carbon atoms packed in honeycomb lattice, similar to an atomic scale chicken wire. Graphene has attracted immense worldwide attention and activities because its unusual electronic properties may eventually lead to vastly faster transistors than any transistors achieved so far. The work is performed by inter-disciplinary collaboration at IBM T. J. Waston Research Center. "Integrating new materials along with the miniaturization of transistors is the driving force in improving the performance of next generation electronic chips," said IBM researchers involved in this project. The operation speed of a transistor is determined by the size of the device and the speed at which electrons travel. The size dependence was one of the driving forces to pursue ever-shrinking Si transistors in semiconductor industries. A key advantage of graphene lies in the very high electron speed with which electrons propagate in it, essential for achieving high-speed, high-performance transistors. Read Full Article: www-03.ibm.com/press/us/en/pressrelease/26302.wss
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