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Post by williamplayer on Jan 20, 2014 12:09:27 GMT
DSpace@Massachusetts Institute of Technology
Delay Analysis of Graphene Field-Effect TransistorsAbstract— In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT of 18 GHz and 22 GHz is obtained before and after de-embedding. The extraction of the internal ( , ) and external capacitances and ) from the scaling behavior of the gate capacitances and allows the intrinsic ( ), extrinsic ( ) and parasitic delays ( ) to be obtained. In addition, the extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFETs structures. Read Full PDF: dspace.mit.edu/openaccess-disseminate/1721.1/72126More Info: dspace.mit.edu/handle/1721.1/72126
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