Post by williamplayer on Jan 27, 2014 12:53:14 GMT
UK Patent Application
International Business Machines Corporation
Self Aligned Graphene Transistor
A graphene filed effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.
Read Full Patent (1 Page): www.ipo.gov.uk/p-find-publication-getPDF.pdf?PatentNo=GB2487308&DocType=A&JournalNumber=6426
International Business Machines Corporation
Self Aligned Graphene Transistor
A graphene filed effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.
Read Full Patent (1 Page): www.ipo.gov.uk/p-find-publication-getPDF.pdf?PatentNo=GB2487308&DocType=A&JournalNumber=6426