Post by Phil Thomas on Jan 10, 2014 19:10:42 GMT
By re-engineering the basic operating principles of digital switches, Samsung Advanced Institute of Technology has developed a device that can switch off the current in graphene without degrading its mobility. The demonstrated graphene-silicon *Schottky barrier can switch current on or off by controlling the height of the barrier. The new device was named Barristor, after its barrier-controllable feature.
As demonstrated in this research, the institute has solved the most difficult problem in graphene device research and has opened the door to new directions for future studies. This breakthrough continues to keep Samsung Advanced Institute of Technology at the forefront of graphene-related industries.
*Schottky Barrier: Named after a German physicist Walter H Schottky, it is a potential (energy) barrier formed at a metal-semiconductor interface. It prevents an electric charge to flow from metal to silicon. Generally, metal-semiconductor junction would have fixed work function and Schottky barrier height, but as for graphene, Schottky barrier height can be controlled through the work function.
As demonstrated in this research, the institute has solved the most difficult problem in graphene device research and has opened the door to new directions for future studies. This breakthrough continues to keep Samsung Advanced Institute of Technology at the forefront of graphene-related industries.
*Schottky Barrier: Named after a German physicist Walter H Schottky, it is a potential (energy) barrier formed at a metal-semiconductor interface. It prevents an electric charge to flow from metal to silicon. Generally, metal-semiconductor junction would have fixed work function and Schottky barrier height, but as for graphene, Schottky barrier height can be controlled through the work function.